MFG:ON Semiconductor Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Descriptions: DIODE SCHOTTKY 100V 20A D2PAK
800
1.47000
1176.00
| Technical/Catalog Information | MBRB20100CTT4 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) (per Diode) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 850mV @ 10A |
| Current - Reverse Leakage @ Vr | 100A @ 100V |
| Reverse Recovery Time (trr) | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MBRB20100CTT4 MBRB20100CTT4 MBRB20100CTT4OSTR ND MBRB20100CTT4OSTRND MBRB20100CTT4OSTR |
MBR 1635
PDF/DataSheet Download
DIODE SCHOTTKY 10A 100V D2PAK
The MBRB20100CT1 is designed as one kind of schottky power rectifier that is using the Schottky Barrier principle with a platinum barrier metal. Features of the MBRB20100CT1 are:(1)Package Designed for Low Profile Through Hole Mount; (2)Center-tap Configurat...
MBR(F,B)2090CT & MBR(F,B)20100CT datasheet
This MBRB20080CT center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power sup...
This MBRB20...CT center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power sup...
Price: 0.14-0.19 USD
Mode MOSFET, TO-252, 30 V
Price: 1.2-1.7 USD
highly-integrated 32-bit microcontroller, QFP, Background Debugging Mode
Price: 0.65-3 USD
CMOS pseudo-static RAM, SOP, -1.0 to 7.0 V, 256k bit, high-speed
Price: 5-10 USD
Radar Pulsed Power Transistor, 75W, 2.7GHz to 3.1GHz, High efficiency inter-digitized geometry
Price: 0.5-0.8 USD
1K, 10MHZ, 8SOIC , low-power CMOS, 8-bit, microcontroller, AVR enhanced RISC architecture
Price: 20-50 USD
36-Mbit QDR-II SRAM, 2-Word Burst Architecture, 165TFBGA, high bandwidth, Double Data Rate
Price: 0.1-50 USD
Balanced Modulator, DIP, 30 Vdc, Balanced Inputs and Outputs, High Common Mode Rejection
Price: 2.06-2.1 USD
DIP-40, Enhanced FLASH Microcontrollers, -0.3V to +7.5V, Power saving Sleep mode
Price: 0.64-3.18 USD
2.5V or 2.7V, serial-interface Flash memory, 8MBIT, 50MHZ, 8SOIC, AT45DB081D-SU
Price: 1-2 USD
IC DRIVER DOT BAR DISPLAY 18-DIP - LM3914N-1
Price: 28-60 USD
power transistor module, 1200V, 1380W, 3A, high voltage, free wheeling diode, insulated type
Price: 14-20 USD
extended memory, 2 kB RAM, 24 MHz, 80C51 MCU, 96 kB Flash, 44-PLCC, 8-bit microcontroller
