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MFG:Taiwan Semiconductor D/C:2004

MFG:Taiwan Semiconductor D/C:2004

| Type Number | Symbol | MBS2 | MBS4 | MBS6 | MBS8 | MBS10 | Units |
| Maximum Recurrent Peak Reverse Voltage | VRRM | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS Voltage | VRMS | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current On glass-epoxy P.C.B. On aluminum substrate |
I(AV) | 0.5 0.8 |
A | ||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM | 35 | A | ||||
| Maximum Instantaneous Forward Voltage @ 0.4A |
VF | 1.0 | V | ||||
| Maximum DC Reverse Current @ TA=25 at Rated DC Blocking Voltage @ TA=125 |
IR | 5.0 100 |
uA uA | ||||
| Typical Junction Capacitance Per Leg | Cj | 13 | pF | ||||
| Typical Thermal Resistance Per Leg | RJA | 85 | /W | ||||
| Operating Temperature Range | TJ | -55 to +150 | |||||
| Storage Temperature Range | TSTG | -55 to +150 | |||||
MBS4
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