Transistors Bipolar (BJT) 200mA 60V Dual NPN
MBT3904DW1T1: Transistors Bipolar (BJT) 200mA 60V Dual NPN
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
| Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.2 A |
| DC Collector/Base Gain hfe Min : | 40 at 0.1 mA at 1 V | Configuration : | Dual |
| Maximum Operating Frequency : | 300 MHz (Min) | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
| Packaging : | Reel |

| Rating | Symbol | Voltage | Unit |
| CollectorEmitter Voltage | V CEO | V | |
| MBT3904DW1T1 (NPN) | 40 | ||
| MBT3906DW1T1 (PNP) | -40 | ||
| CollectorBase Voltage | V CBO | V | |
| MBT3904DW1T1 (NPN) | 60 | ||
| MBT3906DW1T1 (PNP) | -40 | ||
| EmitterBase Voltage | V EBO | V | |
| MBT3904DW1T1 (NPN) | 6.0 | ||
| MBT3906DW1T1 (PNP) | -5.0 | ||
| Collector Current -Continuous | I C | mAdc | |
| MBT3904DW1T1 (NPN) | 200 | ||
| MBT3906DW1T1 (PNP) | 200 | ||
| Electrostatic Discharge | ESD | HBM>16000, | V |
| MM>2000 |
| Technical/Catalog Information | MBT3904DW1T1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 200mA |
| Power - Max | 150mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Frequency - Transition | 300MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| Packaging | Cut Tape (CT) |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MBT3904DW1T1 MBT3904DW1T1 MBT3904DW1T1OSCT ND MBT3904DW1T1OSCTND MBT3904DW1T1OSCT |