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MBT35200MT1G

Transistors Bipolar (BJT) Low Saturation

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SeekIC No. : 00205196 Detail

MBT35200MT1G: Transistors Bipolar (BJT) Low Saturation

MBT35200MT1G Data Sheet

floor Price/Ceiling Price

US $ .14~.23 / Piece | Get Latest Price
Part Number:
MBT35200MT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.23
  • $.22
  • $.18
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 100 at 1 A at 1.5 V Configuration : Single Quad Collector
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TSOP
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 100 MHz (Min)
Configuration : Single Quad Collector
Package / Case : TSOP
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : 35 V
DC Collector/Base Gain hfe Min : 100 at 1 A at 1.5 V


Parameters:

Technical/Catalog InformationMBT35200MT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)35V
Current - Collector (Ic) (Max)2A
Power - Max1.75W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1.5V
Vce Saturation (Max) @ Ib, Ic310mV @ 20mA, 2A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / Case6-TSOP
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MBT35200MT1G
MBT35200MT1G
MBT35200MT1GOSCT ND
MBT35200MT1GOSCTND
MBT35200MT1GOSCT



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