MBT3904DW2T1

Transistors Bipolar (BJT) 200mA 60V Dual NPN

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SeekIC No. : 00214070 Detail

MBT3904DW2T1: Transistors Bipolar (BJT) 200mA 60V Dual NPN

floor Price/Ceiling Price

Part Number:
MBT3904DW2T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 40 at 0.1 mA at 1 V Configuration : Dual
Maximum Operating Frequency : 300 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-88
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Configuration : Dual
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 40 at 0.1 mA at 1 V
Maximum Operating Frequency : 300 MHz (Min)
Package / Case : SC-88


Features:

• hFE, 100−300
• Low VCE(sat), 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Packages are Available



Pinout

  Connection Diagram


Specifications

Rating Symbol Voltage Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 60 Vdc
EmitterBase Voltage VEBO 60 Vdc
Collector Current -Continuous IC 200 mAdc
Electrostatic Discharge ESD HBM>16000,
MM>2000
V
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.



Description

The MBT3904DW1T1 and MBT3904DW2T1 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.




Parameters:

Technical/Catalog InformationMBT3904DW2T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)200mA
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MBT3904DW2T1
MBT3904DW2T1
MBT3904DW2T1OS ND
MBT3904DW2T1OSND
MBT3904DW2T1OS



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