MBT3906DW1T1

Transistors Bipolar (BJT) 200mA 40V Dual PNP

product image

MBT3906DW1T1 Picture
SeekIC No. : 00214535 Detail

MBT3906DW1T1: Transistors Bipolar (BJT) 200mA 40V Dual PNP

floor Price/Ceiling Price

Part Number:
MBT3906DW1T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 60 at 0.1 mA at 1 V Configuration : Dual
Maximum Operating Frequency : 250 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-363
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Configuration : Dual
Package / Case : SOT-363
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 60 at 0.1 mA at 1 V
Maximum Operating Frequency : 250 MHz (Min)


Features:

• hFE, 100−300
• Low VCE(sat), 3 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Package is Available



Specifications

Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −40 Vdc
Collector−Base Voltage VCBO −40 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC −200 mAdc
Electrostatic Discharge ESD HBM>16000,
MM>2000
V



Description

The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.


Parameters:

Technical/Catalog InformationMBT3906DW1T1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor Type2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)200mA
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MBT3906DW1T1
MBT3906DW1T1
MBT3906DW1T1OSCT ND
MBT3906DW1T1OSCTND
MBT3906DW1T1OSCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
LED Products
Circuit Protection
Cable Assemblies
Test Equipment
Soldering, Desoldering, Rework Products
View more