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Part Number: MC-4516CD64ES
Description: The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Sm...
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MC-4516CD64ES
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DataSheet
General Description
MC-4516CD64ES General Description
The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: mPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
MC-4516CD64ES Maximum Ratings
| Parameter | Symbol | Condition | Rating | Unit |
| Voltage on power supply pin relative to GND | VCC | 0.5 to +4.6 | V | |
| Voltage on input pin relative to GND | VT | 0.5 to +4.6 | V | |
| Short circuit output current | IO | 50 | mA | |
| Power dissipation | PD | 8 | W | |
| Operating ambient temperature | TA | 0 to +70 | °C | |
| Storage temperature | Tstg | 55 to +125 | °C |
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
MC-4516CD64ES Features
· 16,777,216 words by 64 bits organization
· Clock frequency and access time from CLK
· Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
· Pulsed interface
· Possible to assert random column address in every cycle
· Quad internal banks controlled by BA0, BA1 (Bank Select)
· Programmable burst-length (1, 2, 4, 8 and Full Page)
· Programmable wrap sequence (Sequential / Interleave)
· Programmable /CAS latency (2, 3)
· Automatic precharge and controlled precharge
· CBR (Auto) refresh and self refresh
· Single 3.3V ± 0.3V power supply
· LVTTL compatible
· 4,096 refresh cycles/64 ms
· Burst termination by Burst Stop command and Precharge command
· 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
· Unbuffered type
· Serial PD
· Clock frequency and access time from CLK
| Part number | /CAS latency | Clock frequency (MAX.) | Access time from CLK (MAX.) |
| MC-4516CD64ES-A10B | CL = 3 | 100 MHz | 7 ns |
| CL = 2 | 67 MHz | 8 ns | |
| MC-4516CD64PS-A10B | CL = 3 | 100 MHz | 7 ns |
| CL = 2 | 67 MHz | 8 ns |
· Pulsed interface
· Possible to assert random column address in every cycle
· Quad internal banks controlled by BA0, BA1 (Bank Select)
· Programmable burst-length (1, 2, 4, 8 and Full Page)
· Programmable wrap sequence (Sequential / Interleave)
· Programmable /CAS latency (2, 3)
· Automatic precharge and controlled precharge
· CBR (Auto) refresh and self refresh
· Single 3.3V ± 0.3V power supply
· LVTTL compatible
· 4,096 refresh cycles/64 ms
· Burst termination by Burst Stop command and Precharge command
· 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
· Unbuffered type
· Serial PD
MC-4516CD64ES Connection Diagram
MC-4516CD64ES
PDF/DataSheet Download
- Datasheet: MC-4516CD64ES
- File Size: 133125 KB
- Manufacturer: NEC [NEC]
- Click here to Download
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