MCM69Q536TQ8R

The MCM69Q536TQ8R is a 1 Megabit static random access memory, organized as 32K words of 36 bits. The features of MCM69Q536TQ8R are: (1)Single 3.3 V ± 5% Power Supply; (2)Fast Access Times: 6/8/10 ns Max; (3)Sustained Throughput of 2.98 Gigabits/Second; (4)Single Clock Operation; (5)Address, Data Input,E1 , E2, PT , W , and Data Output Registers on Chip; (6)83 MHz Maximum Clock Cycle Time; (7)Self Timed Write; (8)Separate Data Input and Data Output Pins; (9)PassThrough Feature.

The following is about the absolute maximum ratings of MCM69Q536TQ8R: (1)Power Supply Voltage VDD: 0.5 to +4.6 V ; (2)Voltage Relative to VSS for Any Pin Except VDD: 0.5 to VDD+0.5 V ; (3)Output Current: ±20 mA ; (4)Power Dissipation: TBD W ; (5)Temperature Under Bias: 10 to + 85 °C ; (6)Operating Temperature: 0 to + 70 °C ; (7)Storage Temperature - Plastic: 55 to + 125 °C.

The electrical characteristics of the MCM69Q536TQ8R are: (1)supply voltage: 3.135V min and 3.465V max; (2)input high voltage: 2.0V min and VDD+0.5V max; (3)input low voltage: -0.5V min and 0.8V max; (4)input leakage current( all inputs, Vin=0 to VDD): ±1.0A max ; (5)output leakage current(E=VIH, Vout=0 to VDD): ±1.0A max; (6)AC supply current: TBD mA max; (7)output low voltage: 0.4V max; (8)output high voltage: 2.4V min and VDD max.