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MFG:ON D/C:06+
- Table of contents:
MCR12M
-
Suppliers
DataSheet
General Description
MCR12M Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Peak Repetitive OffState Voltage(1) (TJ = 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12D MCR12M MCR12N |
VDRM VRRM |
400 600 800 |
Volts |
|
On-State RMS Current (180° Conduction Angles; TC = 80°C) |
IT(RMS) |
12 |
A |
|
Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) |
ITSM |
100 |
A |
|
Circuit Fusing Consideration (t = 8.33 ms) |
I2t |
41 |
A2sec |
|
Forward Peak Gate Power (Pulse Width 1.0 s, TC = 80°C) |
PGM |
5.0 |
Watts |
|
Forward Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) |
0.5 |
Watts |
|
Forward Peak Gate Current (Pulse Width 1.0 s, TC = 80°C) |
IGM |
2.0 |
A |
|
Operating Junction Temperature Range |
TJ |
40 to +125 |
°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are xceeded.
MCR12M
PDF/DataSheet Download
- Datasheet: MCR12M
- File Size: 94998 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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