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Part Number: MD56V62400/H

 

 

 

 

Description: The MD56V62400/H is a 4-bankx 4,194,304-wordx 4-bit synchronous dynamic RAM, fabricated in...


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MD56V62400/H General Description


The MD56V62400/H is a 4-bank x 4,194,304-word x 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

MD56V62400/H Maximum Ratings

Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
0.5 to VCC + 0.5
V
VCC Supply Voltage
VCC, VCCQ
0.5 to 4.6
V
Storage Temperature
Tstg
55 to 150
°C
Power Dissipation
PD*
1
W
Short Circuit Current
IOS
50
mA
Operating Temperature
Topr
0 to 70
°C

MD56V62400/H Features

• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 4-bank x 4,194,304-word x 4-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
 CAS latency (2, 3)
Burst length (2, 4, 8)
Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Package: 54-pin 400 mil plastic TSOP (Type II) (TSOPII54-P-400-0.80-K) (Product : MD56V62400/H-xxTA) xx indicates speed rank.

MD56V62400/H Connection Diagram

MD56V62400/H  Connection Diagram

MD56V62400/H datasheet

MD5023
PDF/DataSheet Download

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