Application·High input impedance ·Enhancement mode ·Electrodes are isolated from case. Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 3300 V Gate-emitter voltage VGES ±20 V Collector current DC IC 1200 A 1ms ICP 2400 Forward ...
MG1200FXF1US51: Application·High input impedance ·Enhancement mode ·Electrodes are isolated from case. Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 3300 V Gate...
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Features: ·High Input Impedance ·Enhancement Mode ·Electrodes are isolated from case.Specification...
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 3300 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
| Collector current | DC | IC | 1200 | A |
| 1ms | ICP | 2400 | ||
| Forward current | 10 ms (half sine) | IFSM | 10 | kA |
| Junction temperature | Tj | −40 ~ 125 | ||
| Storage temperature range | Tstg | −40 ~ 125 | ||
| Isolation voltage | VIsol | 6000 (AC 1 min) | V | |
| Screw Torque | Terminal: M4/M8 | 2 / 7 | Nm | |
| Mounting | 4 | |||