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MFG:TOSHIBA  D/C:1U1200A3300V  

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Part Number: MG1200FXF1US51

 

MFG: TOSHIBA

 

D/C: 1U1200A3300V

 

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MG1200FXF1US51 Maximum Ratings

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 3300 V
Gate-emitter voltage VGES ±20 V
Collector current DC IC 1200 A
1ms ICP 2400
Forward current 10 ms (half sine) IFSM 10 kA
Junction temperature Tj −40 ~ 125
Storage temperature range Tstg −40 ~ 125
Isolation voltage VIsol 6000 (AC 1 min) V
Screw Torque Terminal: M4/M8 2 / 7 Nm
Mounting 4

MG1200FXF1US51 Typical Application

·High input impedance
·Enhancement mode
·Electrodes are isolated from case.

MG1200FXF1US51 datasheet

MG1200FXF1US51
PDF/DataSheet Download

  • Datasheet: MG1200FXF1US51
  • File Size: 97191 KB
  • Manufacturer: TOSHIBA [Toshiba Semiconductor]
  • Click here to Download

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