Purchase MG1200V1US51, In-stock MG1200V1US51 From SeekIC.
MFG:TOSHIBA D/C:1IGBT: 1200V1700V
- Table of contents:
MG1200V1US51
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Suppliers
DataSheet
General Description
MG1200V1US51 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 1700 | V | |
| Gate-emitter voltage | VGES | 200 | V | |
| Collector current | DC | IC | 1200 | A |
| 1ms | ICP | 2400 | ||
| Forward current | DC | IF | 1200 | A |
| 1ms | IFM | 2400 | ||
| Total power dissipation (Tc=25°C) | PC | 5560 | W | |
| Junction temperature | Tj | −20~125 | ||
| Storage temperature range | Tstg | −40 ~ 125 | ||
| Isolation voltage | VIsol | 5400 (AC 1min) |
V | |
| Screw Torque | Terminal: M4/M8 | 2 / 7 | N`m | |
| Mounting | 4 | |||
MG1200V1US51 Features
·High Input Impedance
·Enhancement Mode
·Electrodes are isolated from case.
·Enhancement Mode
·Electrodes are isolated from case.
MG1200V1US51
PDF/DataSheet Download
- Datasheet: MG1200V1US51
- File Size: 98528 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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