MG200Q2YS65H Selling Leads, Price trend, MG200Q2YS65H DataSheet download, circuit diagram from SeekIC.com

Application·High input impedance·Enhancement-mode·The electrodes are isolated from caseSpecifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V Collector current DC IC 200 A 1ms ICP 400 Forward cu...

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MG200Q2YS65H: Application·High input impedance·Enhancement-mode·The electrodes are isolated from caseSpecifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate...

MG200Q2YS65H Data Sheet

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Part Number:: MG200Q2YS65H
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/23

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Product Details

Description

Application

·High input impedance
· Enhancement-mode
·The electrodes are isolated from case

Specifications

Characteristics		Symbol	Rating	Unit
Collector-emitter voltage		V_CES	1200	V
Gate-emitter voltage		V_GES	±20	V
Collector current	DC	I_C	200	A
Collector current	1ms	I_CP	400	A
Forward current	DC	I_F	200	kA
Forward current	1ms	I_FM	400	kA
Total power dissipation (Tc=25°C)		P_C	1310	W
Junction temperature		T_j	150
Storage temperature range		T_stg	-40 ~ 125
Isolation voltage		V_Isol	2500 (AC 1 minute)	V
Screw Torque			3	N･m
Screw Torque			3	N･m

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MG200Q2YS65H

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