Purchase MG300Q2YS61, In-stock MG300Q2YS61 From SeekIC.
MFG:TOSHIBA D/C:2IGBT: 300A1200V
- Table of contents:
MG300Q2YS61
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Suppliers
DataSheet
General Description
MG300Q2YS61 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 1200 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
| Collector current | DC (Tc = 80°C) | IC | 300 | A |
| Forward current | DC (Tc = 80°C) | IF | 300 | A |
| Total power dissipation (Tc=25°C) | PC | 2700 | W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | -40 ~ 125 | ||
| Isolation voltage | VIsol | 2500 (AC 1 minute) |
Vrms | |
| Screw Torque | 3 | N`m | ||
| 3 | ||||
MG300Q2YS61 Typical Application
`High input impedance
`High speed: tf = 0.3 s (max)
Inductive load
`Low saturation voltage: VCE (sat) = 2.6 V (max)
`Enhancement-mode
`Includes a complete half bridge in one package.
`The electrodes are isolated from case.
`High speed: tf = 0.3 s (max)
Inductive load
`Low saturation voltage: VCE (sat) = 2.6 V (max)
`Enhancement-mode
`Includes a complete half bridge in one package.
`The electrodes are isolated from case.
MG300Q2YS61
PDF/DataSheet Download
- Datasheet: MG300Q2YS61
- File Size: 245593 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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