Purchase MG300Q2YS65H, In-stock MG300Q2YS65H From SeekIC.
MFG:TOSHIBA D/C:2IGBT: 300A1200V
- Table of contents:
MG300Q2YS65H
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Suppliers
DataSheet
General Description
MG300Q2YS65H Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 1200 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
| Collector current | DC | IC | 300 | A |
| 1ms | ICP | 600 | ||
| Forward current | DC | IF | 300 | A |
| 1ms | IFM | 600 | ||
| Total power dissipation (Tc=25°C) | PC | 2700 | W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | -40 ~ 125 | ||
| Isolation voltage | VIsol | 2500 (AC 1 minute) |
V | |
| Screw Torque | 3 | N`m | ||
| 3 | ||||
MG300Q2YS65H Typical Application
· High input impedance
· Enhancement-mode
· The electrodes are isolated from case.
· Enhancement-mode
· The electrodes are isolated from case.
MG300Q2YS65H
PDF/DataSheet Download
- Datasheet: MG300Q2YS65H
- File Size: 172744 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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