Purchase MG600Q1US61, In-stock MG600Q1US61 From SeekIC.
MFG:module Package Cooled:TOSHIBA D/C:05+
- Table of contents:
MG600Q1US61
-
Suppliers
DataSheet
General Description
MG600Q1US61 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
| Collector-emitter voltage |
VCES |
1200 |
V | |
| Gate-emitter voltage |
VGES |
±20 |
V | |
| Collector current | DC (Tc = 80°C) |
IC |
600 |
A |
| Forward current | DC (Tc = 80°C) |
IF |
600 |
A |
| Collector power dissipation (Tc = 25°C) |
PC |
5400 |
W | |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature range |
Tstg |
-40 to 125 |
°C | |
| Isolation voltage |
Visol |
2500 (AC 1 minute) |
Vrms | |
| Screw torque |
Terminal |
- |
3 |
N·m |
|
Mounting |
- |
3 |
N·m | |
MG600Q1US61 Features
` High input impedance
` High speed: tf = 0.3 s (max)
Inductive load
` Low saturation voltage: VCE (sat) = 2.6 V (max)
` The electrodes are isolated from case.
` Enhancement-mode
` High speed: tf = 0.3 s (max)
Inductive load
` Low saturation voltage: VCE (sat) = 2.6 V (max)
` The electrodes are isolated from case.
` Enhancement-mode
MG600Q1US61
PDF/DataSheet Download
- Datasheet: MG600Q1US61
- File Size: 239883 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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