Purchase MGFC47V5864, In-stock MGFC47V5864 From SeekIC.
Package Cooled:MIT D/C:0-500
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MGFC47V5864
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DataSheet
General Description
MGFC47V5864
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- Datasheet: MGFC47V5864
- File Size: 64365 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
- ·MGF 1001 P
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- Dua Oscilltor MMIC
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- ·MGF 1302
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- LOW NOISE GAAS FET
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- ·MGF 1303B
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- TAPE CARRIER SMALL SIGNAL GAAS FET
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- ·MGF 2407A
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- ·MGF 2415A
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- ·MGF 2430A
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- ·MGF 2445
- Mitsubishi
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The MGFC47A4450 is device is an internally impendance-matched GaAs power FET especially designed for use in 4.4 to 5.0GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MGFC47A4450 has five features.The first o...
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The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
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The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFC45V5867
The MGFC45V5867 device is an internally impendance-matched GaAs power FET especially designed for use in 5.8 to 6.75GHz band amplifiers.The hermetically sealed metal-ceramic package gurantees high reliability. The MGFC45V5867 has four features.The first one...
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