Features: ·Internally impedance matched·High output power·P1dB=8W (TYP.) @f=14.0~14.5GHz·High linear power gain·GLP=5.5dB (TYP.) @f=14.0~14.5GHz·High power added efficiency·hadd =20%(TYP.) @f=14.0~14.5GHz, P1dBApplication·For use in 14.0~14.5GHz band amplifiersSpecifications Parameter ...
MGFK39V4045: Features: ·Internally impedance matched·High output power·P1dB=8W (TYP.) @f=14.0~14.5GHz·High linear power gain·GLP=5.5dB (TYP.) @f=14.0~14.5GHz·High power added efficiency·hadd =20%(TYP.) @f=14.0~1...
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Features: · Internally impedance matched· Flip-chip mounted· High output power P1dB = 1.1W(TYP....
| Parameter |
Symbol |
Ratings |
Unit |
| Gate to drain voltage |
VGDO |
-15 |
V |
| Gate to source voltage |
VGSO |
-15 |
V |
| Drain current |
ID |
6.0 |
A |
| Reverse gate current |
IGR |
-18 |
mA |
| Forward gate current |
IGF |
36 |
mA |
| Total power dissipation *1 |
PT |
42.8 |
W |
| Channel temperature |
Tch |
175 |
deg.C |
| Storage temperature |
Tstg |
65 /+175 |
deg.C |