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MGFK44A4045

Features: ・Internally impedance matched・High output power P1dB = 44.0dBm(TYP.) @f=14.0-14.5GHz・High linear power gain GLP = 6.0dB(TYP) @f=14.0-14.5GHzApplication・For use in 14.0-14.5GHz band amplifiersSpecifications Symbol Parameter Ratings Unit V...

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MGFK44A4045: Features: ・Internally impedance matched・High output power P1dB = 44.0dBm(TYP.) @f=14.0-14.5GHz・High linear power gain GLP = 6.0dB(TYP) @f=14.0-14.5GHzApplication・For use...

MGFK44A4045 Data Sheet

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Part Number:
MGFK44A4045
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

・Internally impedance matched
・High output power P1dB = 44.0dBm(TYP.) @f=14.0-14.5GHz
・High linear power gain GLP = 6.0dB(TYP) @f=14.0-14.5GHz




Application

・For use in 14.0-14.5GHz band amplifiers




Specifications

Symbol
Parameter
Ratings
Unit
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg		 Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
-15
-10
20
-72
144
100
175
-65 / +175
V
V
A
mA
mA
W
deg.C
deg.C
*1 : Tc=25deg.C




Description

The MGFK44A4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.






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