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MFG:ON  Package Cooled:TO  

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Part Number: MGP11N60ED

 

MFG: ON

Package Cooled: TO

 

 

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MGP11N60ED Maximum Ratings

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 600 Vdc
CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc
GateEmitter Voltage - Continuous VGE ±20 Vdc
Collector Current - Continuous @ TC = 25°C
- Continuous @ TC = 90°C
- Repetitive Pulsed Current (1)
IC25
IC90
ICM
15
11
22
Adc
Apk
Total Power Dissipation @ TC = 25°C
PD 96
0.77
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg 55 to 150 °C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W)
tsc 10 s
Thermal Resistance - Junction to Case IGBT
- Junction to Case Diode
- Junction to Ambient
RqJC
RqJC
RqJA
1.3
2.3
65
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C
Mounting Torque, 632 or M3 screw 10 lbfin (1.13 Nm)

MGP11N60ED datasheet

MGP11N60ED
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