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- Table of contents:
MGP14N60E
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Suppliers
DataSheet
General Description
MGP14N60E Maximum Ratings
| Rating | Symbol | Value | Unit |
| CollectorEmitter Voltage | VCES | 600 | Vdc |
| CollectorGate Voltage (RGE = 1.0 MW) | VCGR | 600 | Vdc |
| GateEmitter Voltage - Continuous | VGE | ±20 | Vdc |
| Collector Current - Continuous @ TC = 25°C - Continuous @ TC = 90°C - Repetitive Pulsed Current (1) |
IC25 IC90 ICM |
18 14 28 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 112 0.89 |
Watts W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | 55 to 150 | °C |
| Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W) |
tsc | 10 | s |
| Thermal Resistance - Junction to Case IGBT Thermal Resistance - Junction to Ambient |
RqJC RqJA |
1.1 65 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
| Mounting Torque, 632 or M3 screw | 10 lbfin (1.13 Nm) | ||
MGP14N60E
PDF/DataSheet Download
- Datasheet: MGP14N60E
- File Size: 128444 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MGP11N60E
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor
- 126482 KB
- ·MGP11N60E/D
- IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
- 127674 KB
- ·MGP11N60ED
- ONSEMI [ON Semiconductor]
- SHORT CIRCUIT RATED LOW ON-VOLTAGE
- 149377 KB
- ·MGP11N60ED/D
- IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
- 154129 KB
- ·MGP14N60E/D
- IGBT IN TO-220 14 A @ 90 18 A @ 25 600 VOLTS
- 129317 KB
- ·MGP15N35CL
- ONSEMI [ON Semiconductor]
- Internally Clamped N-Channel IGBT
- 102395 KB
- ·MGP15N38CL
- ONSEMI [ON Semiconductor]
- Internally Clamped N-Channel IGBT
- 72981 KB
- ·MGP15N38CL/D
- 15 AMPERES N-CHANNEL IGBT V CE(on) = 1.8 V 380 VOLTS CLAMPED
- 72981 KB
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