MGW20N60D

Specifications Parameter Symbol Ratings Unit Collector-emitter voltage VCES 600 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc Gate-emitter voltage VGES ±20 Vdc Collector Current - Continuous @ TC = 25°C- Continuous @ TC = 90°C- Repetitiv...

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MGW20N60D: Specifications Parameter Symbol Ratings Unit Collector-emitter voltage VCES 600 Vdc CollectorGate Voltage (RGE = 1.0 MW) VCGR 600 Vdc Gate-emitter voltage ...

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Part Number:
MGW20N60D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

Parameter
Symbol
Ratings
Unit
Collector-emitter voltage
VCES
600
Vdc
CollectorGate Voltage (RGE = 1.0 MW)
VCGR
600
Vdc
Gate-emitter voltage
VGES
±20
Vdc
Collector Current - Continuous @ TC = 25°C
- Continuous @ TC = 90°C
- Repetitive Pulsed Current (1)
IC25
IC90
ICM
32
20
64
Adc
Apk
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
142
1.14
Watt
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 150
°C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 W)
tsc 10 s
Thermal Resistance - Junction to Case IGBT
- Junction to Case Diode
- Junction to Ambient
RqJC
RqJC
RqJA
0.88
2.00
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds TL 260 °C
Mounting Torque, 632 or M3 screw 10 lbfin (1.13 N.m)



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