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MFG:ON Package Cooled:TO
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MGW21N60ED
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DataSheet
General Description
MGW21N60ED Maximum Ratings
| Rating | Symbol | Value | Unit |
| CollectorEmitter Voltage | VCES | 600 | Vdc |
| CollectorGate Voltage (RGE = 1.0 MW) | VCGR | 600 | Vdc |
| GateEmitter Voltage - Continuous | VGE | ±20 | Vdc |
| Collector Current - Continuous @ TC = 25°C - Continuous @ TC = 90°C - Repetitive Pulsed Current (1) |
IC25 IC90 ICM |
66 40 132 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 260 2.08 |
Watts W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | 55 to 150 | °C |
| Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W) |
tsc | 10 | s |
| Thermal Resistance - Junction to Case IGBT Thermal Resistance - Junction to Ambient |
RqJC RqJA |
0.48 35 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
| Mounting Torque, 632 or M3 screw | 10 lbfin (1.13 Nm) | ||
MGW21N60ED
PDF/DataSheet Download
- Datasheet: MGW21N60ED
- File Size: 156425 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MGW12N120
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor
- 234476 KB
- ·MGW12N120/D
- IGBT IN TO-47 12 A @ 90 20 A @ 25 1200 VOLTS
- 200057 KB
- ·MGW12N120D
- ONSEMI [ON Semiconductor]
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode
- 256846 KB
- ·MGW12N120D/D
- IGBT IN TO-47 12 A @ 90 20 A @ 25 1200 VOLTS
- 218504 KB
- ·MGW12N120E/D
- IGBT IN TO-47 12 A @ 90 20 A @ 25 1200 VOLTS
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- ·MGW14N60ED
- ONSEMI [ON Semiconductor]
- Insulated Gate Bipolar Transistor
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- ·MGW14N60ED/D
- IGBT IN TO-47 14 A @ 90 18 A @ 25 600 VOLTS
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- ·MGW20N120
- MOTOROLA [Motorola, Inc]
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