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Package Cooled:03+/04+ D/C:TO3PL
- Table of contents:
MGY25N120
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Suppliers
DataSheet
General Description
MGY25N120 Maximum Ratings
| Rating | Symbol | Value | Unit |
| CollectorEmitter Voltage | VCES | 600 | Vdc |
| CollectorGate Voltage (RGE = 1.0 MW) | VCGR | 600 | Vdc |
| GateEmitter Voltage - Continuous | VGE | ±20 | Vdc |
| Collector Current - Continuous @ TC = 25°C - Continuous @ TC = 90°C - Repetitive Pulsed Current (1) |
IC25 IC90 ICM |
66 40 132 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 260 2.08 |
Watts W/°C |
| Operating and Storage Junction Temperature Range | TJ, Tstg | 55 to 150 | °C |
| Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, RG = 20 W) |
tsc | 10 | s |
| Thermal Resistance - Junction to Case IGBT Thermal Resistance - Junction to Ambient |
RqJC RqJA |
0.48 35 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds | TL | 260 | °C |
| Mounting Torque, 632 or M3 screw | 10 lbfin (1.13 Nm) | ||
MGY25N120
PDF/DataSheet Download
- Datasheet: MGY25N120
- File Size: 234096 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MGY20N120D
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode
- 260884 KB
- ·MGY20N120D/D
- IGBT & DIODE IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS
- 180346 KB
- ·MGY25N120/D
- IGBT IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
- 200418 KB
- ·MGY25N120D
- ONSEMI [ON Semiconductor]
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode
- 262454 KB
- ·MGY25N120D/D
- IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
- 223489 KB
- ·MGY30N60D
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode
- 260690 KB
- ·MGY30N60D/D
- IGBT & DIODE IN TO-264 30 A @ 90 50 A @ 25 600 VOLTS SHORT CIRCUIT RATED
- 221738 KB
- ·MGY40N60
- MOTOROLA [Motorola, Inc]
- Insulated Gate Bipolar Transistor
- 210545 KB
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