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Part Number: MH1332

 

 

 

 

Description: The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35m CMOS process, with up to 3 l...


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MH1332 General Description


The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35m CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The high density and high pin count capabilities of the MH1 family, coupled with the ability to embed memories on the same silicon, makes the MH1 series of arrays an ideal choice for System Level Integration.

The MH1 series is supported by an advance software environment based on industry standards linking proprietary and commercial tools. Cadence, Mentor, Sysnopsys and Vital are the reference front end tools. Floor planning associated with timing driven layout provides a short back end cycle.

The MH1 series comes as a dual use of the MH1RT series, without the latch up and total dose immumity features.

The MH1 series comes as the TEMIC 6th generation of ASIC series designed for military and avionics types of applications in a 15 years time frame.

It is also made available to any of the currently available quality grades: commercial, industrial, automotive and military, and TEMIC will apply for its QML Q certification.

MH1332 Maximum Ratings

Operating Ambient
Temperature                                                  -55°C to +125°C
Storage Temperature                                    -65°C to +150°C
Maximum Input Voltage:
    Inputs VDD                                                +0.5V
    5V tolerant VDD5                                       +0.5V
Maximum Operating Voltage                         3.6V

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

MH1332 Features

High Speed - 150 ps Gate Delay - 2 input NAND, FO=2 (nominal)
Up to 2.2 Million Used Gates and 600 Pins
3 and 2.5 V Libraries
System Level Integration Technology
MEMORY: SRAM, ROM, CAM and FIFO; Gate Level or Embedded
I/O Interfaces: CMOS, LVTTL, LVDS, PCI, USB - Output Currents up to 20 mA, 5V compatible Tolerant I/O
Deep Submicron CAD Flow

MH1332 datasheet

MH1
PDF/DataSheet Download

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