Purchase MH16V725BWJ-5., In-stock MH16V725BWJ-5. From SeekIC.


Part Number: MH16V725BWJ-5.
Description: The MH16V725BWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard 16M x 4 dynami...


Description: The MH16V725BWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard 16M x 4 dynami...
| Symbol | Parameter | Conditions | Ratings | Unit |
| Vcc | Supply voltage | With respect to Vss | -0.5~ 4.6 | V |
| VI | Supply voltage | -0.5~ 4.6 | V | |
| VO | Supply voltage | -0.5~ 4.6 | V | |
| IO | Output current | 50 | mA | |
| Pd | Power dissipation | Ta=25°C | 18 | W |
| Topr | Operating temperature | 0~70 | °C | |
| Tstg | Storage temperature | -40~125 | °C |
| Type name | /RAS access time (max.ns) |
/CAS access time (max.ns) |
Address access time (max.ns) |
/OE access time (max.ns) |
Cycle time (min.ns) |
Power dissipation (typ.W) |
| MH16V725BWJ-5 | 50 | 13 | 25 | 84 | 84 | 5.40 |
| MH16V725BWJ-6 | 60 | 15 | 30 | 104 | 104 | 4.50 |
·Utilizes industry standard 16M x 4 RAMs in SOJ and industry
standard EEPROM in TSSOP
·168-pin (84-pin dual dual in-line package)
·Single +3.3V(±0.3V) supply operation
·Low stand-by power dissipation
32.4mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level
·Low operation power dissipation
MH16V725BWJ -5 . . . . . . . . . . . . . . . . . . 6.48W(Max)
MH16V725BWJ -6 . . . . . . . . . . . . . . . . . . 5.84W(Max)
·All input are directly LVTTL compatible
·All output are three-state and directly LVTTL compatible
·Includes(0.22uF x 18) decoupling capacitors
·4096 refresh cycle every 64ms (CBR Ref)
·8192 refresh cycle every 64ms (RAS Only Ref,Normal R/W)
·Hyper-page mode,Read-modify-write,
/CAS before /RAS refresh,Hidden refresh capabilities
·Gold plating contact pads
| Row Address | A0 ~ A12 |
| Column Address | A0 ~ A10 |
MH1
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