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Part Number: MH1S64CWXTJ-12

 

 

 

 

Description: The MH1S64CWXTJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four industry standard 1Mx16 Synchr...


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MH1S64CWXTJ-12 General Description


The MH1S64CWXTJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four industry standard 1Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.

This is a socket type - memory modules, suitable for easy interchange or addition of modules.

MH1S64CWXTJ-12 Maximum Ratings

Symbol Parameter Condition Ratings Unit
Vdd Supply Voltage with respect to Vss -0.5 ~ 4.6 V
VI Input Voltage with respect to Vss -0.5 ~ 4.6 V
VO Output Voltage with respect to Vss -0.5 ~ 4.6 V
IO Output Current   50 mA
Pd Power Dissipation Ta=25°C 4 W
Topr Operating Temperature   0 ~ 70 °C
Tstg Storage Temperature   -40 ~ 100 °C

MH1S64CWXTJ-12 Features

Frequency CLK Access Time
(Component SDRAM)
-12 83MHz 8ns(CL=3)
-15 67MHz 9.5ns (CL=2)
-1539 67MHz 9ns (CL=3)

·Utilizes industry standard 1M x 16 Synchronous DRAMsTSOP and industry standard EEPROM in TSSOP
·168-pin (84-pin dual in-line package)
·Clock frequency 83MHz/67MHz
·single 3.3V±0.3V power supply
·Fully synchronous operation referenced to clock rising edge
·Dual bank operation controlled by BA(Bank Address)
·Burst length- 1/2/4/8(programmable)
·/CAS latency- 1/2/3(programmable)
·Burst length- 1/2/4/8(programmable)
·Column access - random
·Auto precharge / All bank precharge controlled by A1
·Auto refresh and Self refresh
·4096 refresh cycle /64ms
·LVTTL Interface

MH1S64CWXTJ-12 datasheet

MH1S64CWXTJ-12
PDF/DataSheet Download

  • Datasheet: MH1S64CWXTJ-12
  • File Size: 700253 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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