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Part Number: MH1S72CPG-10

 

 

 

 

Description: The MH1S72CPG is 1048576-word by 64-bit Synchronous DRAM module. This consists of five industry standa...


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MH1S72CPG-10 General Description


The MH1S72CPG is 1048576-word by 64-bit Synchronous DRAM module. This consists of five industry standard 1Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.

The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.

This is a socket type - memory modules, suitable for easy interchange or addition of modules.

MH1S72CPG-10 Maximum Ratings

Symbol Parameter Condition Ratings Unit
Vdd Supply Voltage with respect to Vss -0.5 ~ 4.6 V
VI Input Voltage with respect to Vss -0.5 ~ 4.6 V
VO Output Voltage with respect to Vss -0.5 ~ 4.6 V
IO Output Current   50 mA
Pd Power Dissipation Ta=25°C 5 W
Topr Operating Temperature   0 ~ 70 °C
Tstg Storage Temperature   -40 ~ 100 °C

MH1S72CPG-10 Features

 

Frequency CLK Access Time
(Component SDRAM)
-10 100MHz 8ns(CL=3)
-12 83MHz 8ns (CL=3)
-15 67MHz 9ns (CL=3)
·Utilizes industry standard 1M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
·168-pin (84-pin dual in-line package) single 3.3V±0.3V power supply
·Clock frequency 100MHz/83MHz/67MHz
·Fully synchronous operation referenced to clock risingedge
·Dual bank operation controlled by BA(Bank Address)/CAS latency- 1/2/3(programmable)
·Burst length- 1/2/4/8(programmable)
·Burst type- sequential / interleave(programmable)
·Column access - random
·Auto precharge / All bank precharge controlled by A10Auto refresh and Self refresh
4096 refresh cycle /64ms
·LVTTL Interface



MH1S72CPG-10 datasheet

MH1S72CPG-10
PDF/DataSheet Download

  • Datasheet: MH1S72CPG-10
  • File Size: 698322 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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