MH28S72PJG -7

Features:

·Utilizes industry standard 64M X 4 Synchronous DRAMs in TSOP package , industry standard Resister in TSSOP package , and industry standard PLL in TSSOP package.
·Single 3.3V +/- 0.3V supply
·Burst length 1/2/4/8/Full Page (programmable)
·Burst type sequential / interleave (programmable)
·Column access random
·Burst Write / Single Write (programmable)
·Auto precharge / Auto bank precharge controlled by A10
·Auto refresh and Self refresh
·LVTTL Interface
·8192 refresh cycles every 64ms


Application

Main memory unit for computers, Microcomputer memory


Specifications

Symbol	Parameter	Condition	Ratings	Unit
Vdd	Supply Voltage	with respect to Vss	-0.5 ~ 4.6	V
VI	Input Voltage	with respect to Vss	-0.5 ~ 4.6	V
VO	Output Voltage	with respect to Vss	-0.5 ~ 4.6	V
IO	Output Current		50	mA
Pd	Power Dissipation	Ta=25°C	39	W
Topr	Operating Temperature		0 ~ 70	°C
Tstg	Storage Temperature		-45 ~ 100	°C

Description

The MH28S72PJG is 134,217,728 - word x 72-bit Synchronous DRAM stacked structural module. This consist of t hirty-six industry standard 64M x 4 Synchronous DRAMs in TSOP.

The stacked structure of MH28S72PJG on a card edge dual inline package prov ides any application where high densities and large of quantities memory are required.

MH28S72PJG is a socket-type memory module ,suitable for easy interchange or addition of module