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Part Number: MH28S72PJG -7

 

 

 

 

Description: The MH28S72PJG is 134,217,728 - word x 72-bit Synchronous DRAM stacked structural module. This consist of t hirty-six i...


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MH28S72PJG -7 General Description


The MH28S72PJG is 134,217,728 - word x 72-bit Synchronous DRAM stacked structural module. This consist of t hirty-six industry standard 64M x 4 Synchronous DRAMs in TSOP.

The stacked structure of TSOP on a card edge dual inline package prov ides any application where high densities and large of quantities memory are required.

This is a socket-type memory module ,suitable f or
easy interchange or addition of module

MH28S72PJG -7 Maximum Ratings

Symbol Parameter Condition Ratings Unit
Vdd Supply Voltage with respect to Vss -0.5 ~ 4.6 V
VI Input Voltage with respect to Vss -0.5 ~ 4.6 V
VO Output Voltage with respect to Vss -0.5 ~ 4.6 V
IO Output Current   50 mA
Pd Power Dissipation Ta=25°C 39 W
Topr Operating Temperature   0 ~ 70 °C
Tstg Storage Temperature   -45 ~ 100 °C

MH28S72PJG -7 Features

·Utilizes industry standard 64M X 4 Synchronous DRAMs in TSOP package , industry standard Resister in TSSOP package , and industry standard PLL in TSSOP package.
·Single 3.3V +/- 0.3V supply
·Burst length 1/2/4/8/Full Page (programmable)
·Burst type sequential / interleave (programmable)
·Column access random
·Burst Write / Single Write (programmable)
·Auto precharge / Auto bank precharge controlled by A10
·Auto refresh and Self refresh
·LVTTL Interface
·8192 refresh cycles every 64ms

MH28S72PJG -7 Typical Application

Main memory unit for computers, Microcomputer memory

MH28S72PJG -7 datasheet

MH203
PDF/DataSheet Download

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