Purchase MH32S72PHB-6, In-stock MH32S72PHB-6 From SeekIC.
Part Number: MH32S72PHB-6
Description: The MH32S72PHB is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard 16M x 8 ...
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MH32S72PHB-6
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DataSheet
General Description
MH32S72PHB-6 General Description
The MH32S72PHB is 33554432 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard 16M x 8 Synchronous DRAMs in TSOP.
The TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.
This is a socket-type memory module ,suitable for easy interchange or addition of module.
MH32S72PHB-6 Maximum Ratings
| Symbol | Parameter | Condition | Ratings | Unit |
| Vdd | Supply Voltage | with respect to Vss | -0.5 ~ 4.6 | V |
| VI | Input Voltage | with respect to Vss | -0.5 ~ 4.6 | V |
| VO | Output Voltage | with respect to Vss | -0.5 ~ 4.6 | V |
| IO | Output Current | 50 | mA | |
| Pd | Power Dissipation | Ta=25C | 18 | W |
| Topr | Operating Temperature | 0 ~ 70 | C | |
| Tstg | Storage Temperature | -45 ~ 100 | C |
MH32S72PHB-6 Features
· Utilizes industry standard 16M X 8 Synchronous DRAMs in TSOP package
· Single 3.3V +/- 0.3V supply
· Max.Clock frequency 133MHz
· Fully synchronous operation referenced to clock rising edge
· 4-bank operation controlled by BA0,BA1(Bank Address)
· /CAS latency -2/3(programmable,at buffer mode)
· LVTTL Interface
· Burst length 1/2/4/8/Full Page(programmable)
· Burst type- Sequential and interleave burst (programmable)
· Random column access
· Burst Write / Single Write(programmable)
· Auto precharge / All bank precharge controlled by A10
· Auto refresh and Self refresh
· 4096 refresh cycles every 64ms
· Single 3.3V +/- 0.3V supply
· Max.Clock frequency 133MHz
· Fully synchronous operation referenced to clock rising edge
· 4-bank operation controlled by BA0,BA1(Bank Address)
· /CAS latency -2/3(programmable,at buffer mode)
· LVTTL Interface
· Burst length 1/2/4/8/Full Page(programmable)
· Burst type- Sequential and interleave burst (programmable)
· Random column access
· Burst Write / Single Write(programmable)
· Auto precharge / All bank precharge controlled by A10
· Auto refresh and Self refresh
· 4096 refresh cycles every 64ms
MH32S72PHB-6 Typical Application
Main memory or graphic memory in computer systems
MH32S72PHB-6
PDF/DataSheet Download
- Datasheet: MH32S72PHB-6
- File Size: 596072 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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MH32S72PHB-6 Relative Products
MH32S72PHB -8
BANK ACTIVATEThe SDRAM MH32S72PHB -8has four independent banks. Each bank is activated by the ACT command with the bank address(BA0,1). A row is indicated by the row address A11-0. The minimum activation interval between one bank and the other bank is tRRD.T...
MH32S72PHB -7
BANK ACTIVATEThe SDRAM MH32S72PHB -7has four independent banks. Each bank is activated by the ACT command with the bank address(BA0,1). A row is indicated by the row address A11-0. The minimum activation interval between one bank and the other bank is tRRD.T...
MH32S72PHB -10
BANK ACTIVATEThe SDRAM MH32S72PHB -10has four independent banks. Each bank is activated by the ACT command with the bank address(BA0,1). A row is indicated by the row address A11-0. The minimum activation interval between one bank and the other bank is tRRD....
MH32S72DBFA -8
The MH32S72DBFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of t hirty-six industry standard 16M x 4 Synchronous DRAMs in TSOP.The stacked structure of TSOP MH32S72DBFAon a card edge dual inline package provides any a...
MH32S72DBFA -7
The MH32S72DBFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of t hirty-six industry standard 16M x 4 Synchronous DRAMs in TSOP.The stacked structure of TSOP MH32S72DBFAon a card edge dual inline package provides any a...
MH32S72DBFA -6
The MH32S72DBFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous DRAMs in TSOP.The stacked structure of TSOP MH32S72DBFAon a card edge dual inline package provides any ap...
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