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Part Number: MH4V6445BXJJ-6S

 

 

 

 

Description: This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic ...


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MH4V6445BXJJ-6S General Description


This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic RAMs in TSOP and one industry EEPROM in TSSOP.

The mounting of TSOP on a card edge dual in line package provides any application where high densities and large of
quantities memory are required.

This is a socket-type memory module,suitable for easy interchange of addition of modules.

MH4V6445BXJJ-6S Maximum Ratings

Symbol Parameter Condition Ratings Unit
Vcc Supply Voltage with respect to Vss -0.5 ~ 4.6 V
VI Input Voltage -0.5 ~ Vdd+0.5 V
VO Output Voltage -0.5 ~ Vdd+0.5 V
IO Output Current   50 mA
Pd Power Dissipation Ta=25°C 4 W
Topr Operating Temperature   0 ~ 70 °C
Tstg Storage Temperature   -40 ~ 100 °C

MH4V6445BXJJ-6S Features

·single 3.3V± 0.3V supply
·Low stand-by power dissipation
                         7.2mW- - - - - - - - - LVCMOS input level
·operating power dissipation
                    MH4V6445BXJJ-5,5S - - - - 2016 mW(max.)
                    MH4V6445BXJJ-6,6S - - - - 1872 mW(max.)
·Self refresh capability*
                    Self refresh current - - - - 1600 uA(max.)
·All input, output LVTTL compatible and low capacitance
·Utilizes industry standard 4Mx16 RAMs in TSOP
   and industry standard EEPROM in TSSOP.
·Includes decoupling capacitor(0.22uFx4)
·Hyper page mode , Read-modify-write,
   CAS before RAS refresh,Hidden refresh capabilities.
·Early-write mode,OE and W to control output buffer impedance.

MH4V6445BXJJ-6S Typical Application

Main memory unit for computer,Microcomputer memory,Refresh memory for CRT.

MH4V6445BXJJ-6S datasheet

MH4V6445BXJJ-6S
PDF/DataSheet Download

  • Datasheet: MH4V6445BXJJ-6S
  • File Size: 156214 KB
  • Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
  • Click here to Download

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