Purchase MH64S72VJG-6, In-stock MH64S72VJG-6 From SeekIC.
Part Number: MH64S72VJG-6
Description: The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4...
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MH64S72VJG-6
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DataSheet
General Description
MH64S72VJG-6 General Description
The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
The TSOP on a card edge dual in-line package prov ides any application where high densities and large of quantities memory are required.
This is a socket-ty pe memory module ,suitable f or easy interchange or addition of module.
MH64S72VJG-6 Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
|
Vdd |
Supply Voltage |
With respect to Vss |
-0.5 ~ 4.6 |
V |
|
VI |
Input Voltage |
With respect to Vss |
-0.5 ~ 4.6 |
V |
|
VO |
Output Voltage |
With respect to Vss |
-0.5 ~ 4.6 |
V |
|
IO |
Output Current |
50 |
mA | |
|
Pd |
Power Dissipation |
Ta=25°C |
22 |
W |
|
Topr |
Operating Temperature |
0~ 70 |
°C | |
|
Tstg |
Storage Temperature |
-40~ 100 |
°C |
MH64S72VJG-6 Features
·Utilizes industry standard 64M X 4 Synchronous DRAMs in TSOP package , industry standard Resistered buffer in TSSOP package,industry standard PLL in TSSOP package
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz forFully synchronous operation
·referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·8192 refresh cycles every 64ms
·Single 3.3V +/- 0.3V supply
·Max.Clock frequency 133MHz forFully synchronous operation
·referenced to clock rising edge
·4-bank operation controlled by BA0,BA1(Bank Address)
·/CAS latency -2/3(programmable,at buffer mode)
·LVTTL Interface
·Burst length 1/2/4/8/Full Page(programmable)
·Burst type- Sequential and interleave burst (programmable)
·Random column access
·Burst Write / Single Write(programmable)
·Auto precharge / All bank precharge controlled by A10
·Auto refresh and Self refresh
·8192 refresh cycles every 64ms
MH64S72VJG-6 Typical Application
Main memory or graphic memory in computer systems
MH64S72VJG-6
PDF/DataSheet Download
- Datasheet: MH64S72VJG-6
- File Size: 981686 KB
- Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
- Click here to Download
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MH64S72VJG-6 Relative Products
MH64S72VJG-5
The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.The TSOP MH64S72VJGon a card edge dual in-line package prov ides any application where high densities and large...
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The MH64S72QJA is 67108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4 Sy nchronous DRAMs in TSOP.The stacked structure of TSOP MH64S72QJAon a card edge dual inline package prov ides any ...
MH64S72QJA -6
The MH64S72QJA is 64108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4 Sy nchronous DRAMs in TSOP.The stacked structure of TSOP MH64S72QJAon a card edge dual inline package prov ides any ...
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The MH64S72AWJA is 67108864 - word x 72-bit Synchronous DRAM module. This consist of t hirty-six industry standard 32M x 4 Synchronous DRAMs in smalTSOP.The smal TSOP MH64S72AWJAon a card edge dual in-line package provides any application where high densitie...
MH64S72AWJA -7
The MH64S72AWJA is 67108864 - word x 72-bit Synchronous DRAM module. This consist of t hirty-six industry standard 32M x 4 Synchronous DRAMs in smalTSOP.The smal TSOP MH64S72AWJAon a card edge dual in-line package provides any application where high densitie...
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