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Specifications Rating Symbol Value Unit Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V Average Output Rectified Current IO 8.0 A Peak Non-repetitive Surge Current (1/2 cycle )(1) IFSM 200 A IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± ...

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MHPM7A30A60B: Specifications Rating Symbol Value Unit Peak Repetitive Reverse Voltage (TJ = 125°C) VRRM 1200 V Average Output Rectified Current IO 8.0 A Peak Non-repetitive Surge Current (1...

MHPM7A30A60B Data Sheet

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Part Number:: MHPM7A30A60B
Supply Ability:: 5000

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Upload time: 2026/2/20

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Features: • Short Circuit Rated 10 s @ 125°C, 400 V• Pin-to-Baseplate Isolation Exceed...

Product Details

Description

Specifications

Rating	Symbol	Value	Unit
Peak Repetitive Reverse Voltage (T_J= 125°C)	V_RRM	1200	V
Average Output Rectified Current	I_O	8.0	A
Peak Non-repetitive Surge Current (1/2 cycle )(1)	I_FSM	200	A
IGBT Reverse Voltage	V_CES	1200	V
Gate-Emitter Voltage	V_GES	± 20	V
Continuous IGBT Collector Current	I_Cmax	8.0	A
Peak Repetitive IGBT Collector Current(2)	I_C(pk)	16	A
Continuous Free-Wheeling Diode Current	I_Fmax	8.0	A
Peak Repetitive Free-Wheeling Diode Current(2)	I_F(pk)	16	A
IGBT Power Dissipation per die (T_C = 95°C)	P_D	50	W
Free-Wheeling Diode Power Dissipation per die (T_C = 95°C)	P_D	30	W
Junction Temperature Range	T_J	40 to +125	°C
Short Circuit Duration (V_CE = 600V, T_J= 25°C)	t_sc	10	ms

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MHPM7A30A60B

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