MIG20J106LA

The MIG20J106LA is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.

It has four features. (1)Three phase IGBT inverter output. (2)Gate drive circuit. (3)Protection logic over current, over temperature and under voltage. (4)The electrodes are isolated from case. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its inverter part supply voltage would be 450V. (2)Its collector emitter voltage would be 600V. (3)Its collector current DC would be 20A. (4)Its collector current peak would be 40A. (5)Its collector power dissipation would be 50W. (6)Its control part supply voltage would be 20V. (7)Its input current would be 30mA. (8)Its fault output voltage would be 20V. (9)Its fault output current would be 10mA. (10)Its storage temperature range would be from -40°C to +125°C. (11)Its operating temperature range would be from -20°C to 90°C. (12)Its isolation voltage would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics about inverter part are concluded as follow. (1)Its supply voltage would be typ 300V. (2)Its collector to emitter saturation voltage would be typ 1.8V and max 2.3V at Ic=20A. (3)Its forward voltage would be typ 2.0V and max 2.7V. (4)Its switching time would be typ 2.0us and max 3.0us for ton and would be typ 0.1us and max 0.2us for trr and would be typ 1.0us and max 2.0us for tc(on) and it would be typ 1.2us and max 2.5us for toff and would be typ 0.6us and max 1.0us for tc(off). (5)Its collector cutoff current would be max 1.0mA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!