MIG25Q806H

The MIG25Q806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.

MIG25Q806H has four features. (1)Integrates inverter, converter power circuits and thermistor in one package. (2)Output (inverter stage) which means 25A/ 1200V IGBT. (3)Input (converter stage) which means 20A/ 1600V silicon rectifier. (4)The electrodes are isolated from case. Those are all the main features.

Some absolute maximum ratings have been concluded into several points of MIG25Q806H as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its gate to emitter voltage would be +/-20V. (3)Its collector current would be 35A for DC and 70A for 1ms. (4)Its forward current would be 25A for DC and would be 50A for 1ms. (5)Its collector power dissipation would be 200W. (6)Its repetitive peak reverse voltage which would be 1600V. (7)Its average output recitified current would be 20A. (8)Its peak one cycle surge forward current (50Hz, non-repetitive) which would be 400A. (9)Its storage temperature range would be from -40°C to 125°C. (10)Its isolation voltage would be 2500V. (11)Its screw torque would be 6Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of MIG25Q806H are concluded as follow. (1)Its gate leakage current would be max +/-500nA. (2)Its collector cutoff current would be max 0.5mA. (3)Its gate to emitter cutoff voltage would be typ 6.0V. (4)Its collector to emitter saturation voltage would be typ 2.8V and max 3.2V. (5)Its input capacitance would be typ 2600pF. (6)Its switching time would be typ 0.07us and max 0.15us for rise time and it would be typ 0.15us and max 0.30us for turn-on time and it would be typ 0.07us and max 0.10us for fall time and it would be typ 0.60us and max 0.9us for turn-off time. (7)Its forward voltage would be typ 2.0V and max 2.8V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!