Position: Home > Datasheet list > MIG Series > Index M > MIG30J906H
Electronica China

Purchase MIG30J906H, In-stock MIG30J906H From SeekIC.

MFG:Other  Category:Other  

MIG30J906H Product Image

MIG Series Datasheet download

Five Points

Part Number: MIG30J906H

Category: Other

MFG: Other

 

 

Description: The MIG30J906H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications...


Urgent Purchase

MIG30J906H General Description


The MIG30J906H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.

MIG30J906H has four features. (1)Integrates inverter, converter power circuits and thermistor in one package. (2)Output (inverter stage) which means 30A/ 600V IGBT. (3)Input (converter stage) which means 30A/ 800V silicon rectifier. (4)The electrodes are isolated from case. Those are all the main features.

Some absolute maximum ratings of MIG30J906H have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its gate to emitter voltage would be +/-20V. (3)Its collector current would be 35A for DC and 70A for 1ms. (4)Its forward current would be 30A for DC and would be 60A for 1ms. (5)Its collector power dissipation would be 125W. (6)Its repetitive peak reverse voltage which would be 800V. (7)Its average output recitified current would be 30A. (8)Its peak one cycle surge forward current (50Hz, non-repetitive) which would be 400A. (9)Its storage temperature range would be from -40°C to 125°C. (10)Its isolation voltage would be 2500V. (11)Its screw torque would be 6Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of MIG30J906H are concluded as follow. (1)Its gate leakage current would be max +/-500nA. (2)Its collector cutoff current would be max 1.0mA. (3)Its gate to emitter cutoff voltage would be min 5.0V and max 8.0V. (4)Its collector to emitter saturation voltage would be typ 2.1V and max 2.7V. (5)Its switching time would be typ 0.1us and max 0.2us for rise time and it would be typ 0.25us and max 0.50us for turn-on time and it would be typ 0.15us and max 0.30us for fall time and it would be typ 0.50us and max 0.8us for turn-off time. (6)Its forward voltage would be typ 2.0V and max 2.8V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

MIG30J906H datasheet

MIG30J906H
PDF/DataSheet Download

Find MIG30J906H Suppliers

  • ·MIG100J101H
  • TOSHIBA [Toshiba Semiconductor] 
  • TOSHIBA Intelligent Power Module Silicon N Channel IGBT 
  • 223821 KB
  • MIG100J101H Datasheet Download
  • ·MIG100J201H
  • TOSHIBA [Toshiba Semiconductor] 
  • N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) 
  • 348593 KB
  • MIG100J201H Datasheet Download
  • ·MIG100J201HC
  • Toshiba 
  • HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 
  • 255831 KB
  • MIG100J201HC Datasheet Download
  • ·MIG100J6CSB1W
  • MITSUBISHI 
  • High Power Switching Applications Motor Control Applications 
  • 325899 KB
  • MIG100J6CSB1W Datasheet Download
  • ·MIG100J7CSA0A
  • Toshiba 
  •  
  • 335500 KB
  • MIG100J7CSA0A Datasheet Download
  • ·MIG100J7CSB1W
  • TOSHIBA [Toshiba Semiconductor] 
  • TOSHIBA Intelligent Power Module Silicon N Channel IGBT 
  • 180693 KB
  • MIG100J7CSB1W Datasheet Download
  • ·MIG100Q201H
  • TOSHIBA [Toshiba Semiconductor] 
  • N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) 
  • 330787 KB
  • MIG100Q201H Datasheet Download
  • ·MIG100Q6CMA0X
  • Toshiba 
  • HIGH POWER SWITCHING APPLICATION MOTOR CONTROL APPLICATION 
  • 295863 KB
  • MIG100Q6CMA0X Datasheet Download

MIG30J906H Relative Products

  • MIG30J806H

    MIG30J806H

    The MIG30J806H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG30J806H has four features. (1)Integrates inverter, converter power circuits and thermistor in one pack...

  • MIG30J106L

    MIG30J106L

    The MIG30J106L is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG30J106L has four features. (1)Three phase IGBT inverter output. (2)Gate drive circuit. (3)Protection l...

  • MIG30J103HB

    MIG30J103HB

    The MIG30J103HB is a kind of intelligent power module. MIG30J103HB is silicon N channel IGBT. MIG30J103HBis designed for high power switching applications and motor control applications. There are some features as follows: (1)the device includes IGBT drive c...

  • MIG30J103H

    MIG30J103H

    The MIG30J103H is designed as one kind of toshiba intelligent power module silicon N-channel IGBTs. Typical applications include high power switching applications, motor control applications.MIG30J103H has five features. (1)Intelligent power module that incl...

  • MIG300Q2CMB1X

    MIG300Q2CMB1X

    IPM MOD CMPCT DUAL 1200V 300A

  • MIG300Q101H

    MIG300Q101H

Hotspot Suppliers Product

  • Models: MG-7010SA
Price: 2-2.2 USD

    MG-7010SA

    Price: 2-2.2 USD

    selectable-output PLL oscillator, SOP-14, 45mA, C-MOS IC, high reliability, Reflow able, high-dens...

  • Models: ATF20V8B-15PC
Price: 1.5-1.7 USD

    ATF20V8B-15PC

    Price: 1.5-1.7 USD

    High performance EE PLD, DIP-24, Input and I/O Pull-up Resistors, Advanced Flash Technology, 200mA

  • Models: MMGEN161
Price: 1-2 USD

    MMGEN161

    Price: 1-2 USD

    MMGEN161, memory card, Adelong Electronics, Modules

  • Models: RC28F640J3C-120
Price: 6.3-7 USD

    RC28F640J3C-120

    Price: 6.3-7 USD

    Intel StrataFlash Memory, 256 Mbit, 30 ns, –2.0 V to +5.0 V, 100 mA, RC28F640J3C-120

  • Models: 2SK2003-01MR
Price: 0.58-0.63 USD

    2SK2003-01MR

    Price: 0.58-0.63 USD

    N-channel MOS-FET, TO-220F, 600V, 4A, 40W, Low On-Resistance, High Speed Switching

  • Models: THS7316D
Price: 0.1-3 USD

    THS7316D

    Price: 0.1-3 USD

    IC HDTV VIDEO AMP 3CH 8-SOIC - THS7316D

  • Models: OPA2353UA
Price: 1.7-1.73 USD

    OPA2353UA

    Price: 1.7-1.73 USD

    high-speed, 10mV, single-supply, rail-to-rail, operational amplifier, 22V/μs

  • Models: UMZ1NTR
Price: 0.1-1 USD

    UMZ1NTR

    Price: 0.1-1 USD

    50V, 150MA, SOT-363, NPN / PNP, epitaxial planar, silicon transistor

  • Models: 2SA1015-GR
Price: 0.01-1 USD

    2SA1015-GR

    Price: 0.01-1 USD

    PNP Silicon, Plastic-Encapsulate Transistor, TO-92, 0.15A Collector-current, 50V Collector-base Vo...

  • Models: 6000-150K-RC
Price: 1-1 USD

    6000-150K-RC

    Price: 1-1 USD

    DIP, RF inductor, High current capacity, Fixed lead spacing, 15μH, 2.9A, Bourns Electronic Soluti...

  • Models: 74HC04A
Price: 0.1-2 USD

    74HC04A

    Price: 0.1-2 USD

    sop, Hex Inverter, Gate CMOS

  • Models: VQ1001P
Price: 26-28 USD

    VQ1001P

    Price: 26-28 USD

    Enhancement-Mode, MOSFET Transistor, Quad N-Channel, 30V (D-S), Low Input Capacitance

Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All