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Part Number: MIG50J201H

 

 

 

 

Description: The MIG50J201H is a kind of intelligent power module. It is silicon N channel IGBT. The device is desi...


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MIG50J201H General Description


The MIG50J201H is a kind of intelligent power module. It is silicon N channel IGBT. The device is designed for high power switching applications and motor control applications.

There are some features as follows: (1)integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package; (2)the electrodes are isolated from case; (3)high speed type IGBT: VCE(sat)=2.5 V (max), toff=3.0s (max) and trr=0.30s (max).

What comes next is about the maximum ratings (Ta=25). First is about the inverter section: (1)supply voltage, VCC: 450 V at P-N power terminal; (2)collector-emitter voltage, VCES: 600 V; (3)collector current, IC: 50 A at Tc=25, DC; (4)forward current, IF: 50 A at Tc=25, DC; (5)collector power dissipation, PC: 150 W at Tc=25; (6)junction temperature, Tj: 150. Then is about the brake section: (1)supply voltage, VCC: 450 V at P-N power terminal; (2)collector-emitter voltage, VCES: 600 V; (3)collector current, IC: 30 A at Tc=25, DC;
(4)reverse voltage, VR: 600 V; (5)forward current, IF: 30 A at Tc=25, DC; (6)collector power dissipation, PC: 80 W at Tc=25; (7)junction temperature, Tj: 150. The third is about the control section: (1)control supply voltage, VD: 20 V at VD-GND terminal; (2)input voltage, VIN: 20 V at IN-GND terminal; (3)fault output voltage, VFO: 20 V at FO-GND (L) terminal; (4)fault output voltage, IFO: 14 mA at FO sink current. The last one is about the module section: (1)operating temperature range, TC: -20 to +100; (2)storage temperature range, Tstg: -40 to +125; (3)isolation voltage, VISO: 2500 V when AC 1 minute.

MIG50J201H datasheet

MIG50J201H
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