MFG:Other Category:Other
Category: Other
MFG: Other
Description: The MIG5Q805H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications ...
The MIG5Q805H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.
MIG5Q805H has four features. (1)Integrates inverter, converter power circuits on one package. (2)Output (inverter stage) which means 5A/ 1200V IGBT. (3)Input (converter stage) which means 15A/ 1600V silicon rectifier. (4)The electrodes are isolated from case. Those are all the main features.
Some absolute maximum ratings of MIG5Q805H have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its gate to emitter voltage would be +/-20V. (3)Its collector current would be 5A for DC and 10A for 1ms. (4)Its forward current would be 5A for DC and would be 10A for 1ms. (5)Its collector power dissipation would be 40W. (6)Its repetitive peak reverse voltage which would be 1600V. (7)Its average output recitified current would be 15A. (8)Its peak one cycle surge forward current (50Hz, non-repetitive) which would be 250A. (9)Its storage temperature range would be from -40°C to 125°C. (10)Its isolation voltage would be 2500V. (11)Its screw torque would be 1.5Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of MIG5Q805H are concluded as follow. (1)Its gate leakage current would be max +/-500nA. (2)Its collector cutoff current would be max 1.0mA. (3)Its gate to emitter cutoff voltage would be min 3.0V and max 6.0V. (4)Its collector to emitter saturation voltage would be typ 2.8V and max 3.4V. (5)Its input capacitance would be typ 650pF. (6)Its switching time would be typ 0.07us and max 0.15us for rise time and it would be typ 0.15us and max 0.30us for turn-on time and it would be typ 0.1us and max 0.30us for fall time and it would be typ 0.60us and max 1.2us for turn-off time. (7)Its forward voltage would be typ 2.2V and max 3.0V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
MIG5Q805H
PDF/DataSheet Download
The MIG50Q7CSA0X can be used as high power switching applications motpr control applications. The features of MIG50Q7CSA0X can be summarized as (1)integrates inverter power circuits & control circuits (IGBT drive unit, protection units for short-current...
The MIG50J806H is a kind of TOSHIBA interated IGBT module(silicon N channel IGBT) which is designed for high power switching and motor control applications. Features of MIG50J806H are: (1)integrates inverter, converter power circuits and thermistor in one p...
Price: 0.3-0.4 USD
4 Megabit (512K x 8-bit / 256K x 16-bit), Flash Memory, Boot Sector, CMOS, 3.0 Volt-only
Price: 1.3-1.7 USD
IC 80C51 MCU FLASH 16K 28TSSOP - P89LPC936FDH,518
Price: 65-85 USD
MMIC amplifier, module, 10 V, 12.7~15.4GHz, consistent performance
Price: 1-2 USD
photocoulper, 50 mA, 150 mW, 35 V, sop, 2.5 to 30 mA
Price: 1-1 USD
DC-DC Converter, 2 MHz, Up to 50W/Cubic Inch, )Low Noise FM Control, ZCS Power Architecture
Price: 0.1-1 USD
1024-bit, 1-Wire EEPROM chip, 6TSOC, 2.8V to 5.25V, 20mA, Switchpoint Hysteresis
Price: 0.8-1.5 USD
PCB relay, 10 μA to 2 A, 288Ω, Wide switching power, High dielectric strength, high-sensitivity, ...
Price: 0.1-1 USD
field effect transistor, SOT, -30V
Price: 0.12-0.2 USD
Miniature aluminum electrolytic capacitors, 4.7UF, 50V, 20%, EKY-500ELL4R7ME11D
Price: 0.5-1.5 USD
EMI/RFI, Suppressors & Ferrites, Block Type EMIFIL LC Combined Type, DIP
Price: 10-15 USD
large size, Graphic type LCD module, High contrast, 2 550 mW, 26 cm, Sharp Electrionic Components
Price: 0.1-0.2 USD
self-contained digital sensor IC, SOP, -0.3 to +5.5V, ±20mA, single supply operation
