Purchase MIG75J7CSB1W, In-stock MIG75J7CSB1W From SeekIC.
MFG:TOSHIBA D/C:7IPM: 75A600V
- Table of contents:
MIG75J7CSB1W
-
Suppliers
DataSheet
General Description
MIG75J7CSB1W Maximum Ratings
|
Stage |
Characteristic |
Condition |
Symbol |
Ratings |
Unit |
|
Inverter |
Supply voltage | P-N power terminal |
VCC |
450 |
V |
| Collector-emitter voltage |
- |
VCES |
600 |
V | |
| Collector current | Tc = 25°C, DC |
IC |
75 |
A | |
| Forward current | Tc = 25°C, DC |
IF |
75 |
A | |
| Collector power dissipation | Tc = 25°C, DC |
PC |
460 |
W | |
| Junction temperature |
- |
Tj |
150 |
°C | |
|
Brake |
Supply voltage | P-N power terminal |
VCC |
450 |
V |
| Collector-emitter voltage |
- |
VCES |
600 |
V | |
| Collector current | Tc = 25°C, DC |
IC |
50 |
A | |
| Reverse voltage |
- |
VR |
600 |
V | |
| Forward current | Tc = 25°C, DC |
IF |
50 |
A | |
| Collector power dissipation | Tc = 25°C |
PC |
340 |
W | |
| Junction temperature |
- |
Tj |
150 |
°C | |
|
Control |
Control supply voltage | VD-GND terminal |
VD |
20 |
V |
| Input voltage | IN-GND terminal |
VIN |
20 |
V | |
| Fault output voltage | FO-GND (L) terminal |
VFO |
20 |
V | |
| Fault output current | FO sink current |
IFO |
14 |
mA | |
|
Module |
Operating temperature |
- |
TC |
−20 ~ +100 |
°C |
| Storage temperature range |
- |
Tstg |
−40 ~ +125 |
°C | |
| Isolation voltage | AC 1 minute |
VISO |
2500 |
V | |
| Screw torque (Terminal) | M4 |
- |
2 |
N･m | |
| Screw torque (Mounting) | M5 |
- |
3 |
MIG75J7CSB1W Typical Application
· Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package.
·The electrodes are isolated from the case
·Low thermal resistance
·VCE (sat) = 1.8 V (typ.)
·UL recognized: File No.E87989
·Weight: 278 g (typ.)
·The electrodes are isolated from the case
·Low thermal resistance
·VCE (sat) = 1.8 V (typ.)
·UL recognized: File No.E87989
·Weight: 278 g (typ.)
MIG75J7CSB1W
PDF/DataSheet Download
- Datasheet: MIG75J7CSB1W
- File Size: 190619 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
- ·MIG100J101H
- TOSHIBA [Toshiba Semiconductor]
- TOSHIBA Intelligent Power Module Silicon N Channel IGBT
- 223821 KB
- ·MIG100J201H
- TOSHIBA [Toshiba Semiconductor]
- N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
- 348593 KB
- ·MIG100J201HC
- Toshiba
- HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
- 255831 KB
- ·MIG100J6CSB1W
- MITSUBISHI
- High Power Switching Applications Motor Control Applications
- 325899 KB
- ·MIG100J7CSA0A
- Toshiba
- 335500 KB
- ·MIG100J7CSB1W
- TOSHIBA [Toshiba Semiconductor]
- TOSHIBA Intelligent Power Module Silicon N Channel IGBT
- 180693 KB
- ·MIG100Q201H
- TOSHIBA [Toshiba Semiconductor]
- N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
- 330787 KB
- ·MIG100Q6CMA0X
- Toshiba
- HIGH POWER SWITCHING APPLICATION MOTOR CONTROL APPLICATION
- 295863 KB
MIG75J7CSB1W Relative Products
MIG75J7CSA0A
The MIG75J7CSA0A is designed for high power switching applications,motor control applications.If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin.Soldering should be performed after lead...
MIG75J6CSB1W
MIG75J201H
MIG75J101H
MIG600J2CMB1W
IPM MOD CMPCT DUAL 600V 600A
MIG5Q805H
The MIG5Q805H is designed as toshiba integrated IGBT module silicon N channel IGBT for high power switching applications and motor control applications.MIG5Q805H has four features. (1)Integrates inverter, converter power circuits on one package. (2)Output (i...
Hotspot Suppliers Product
EPF6016TC144-3N
Price: 10.5-10.8 USD
Programmable Logic Device, FPGA, 16K, 144-TQFP, OptiFLEX architecture, -2.0 to 7.0V
A438S10TAC
Price: 50-100 USD
A438S10TAC, IGBT IPM power module, Semikron International
XCV50
Price: 0.001-5 USD
Field-Programmable Gate Array, QFP240, –0.5 to 3.0 V, Fully PCI compliant
EP1C3T144C8N
Price: 6-7 USD
field programmable gate array, QFP, –0.5 to 2.4 V, –25 to 25 mA, High-speed, external memory, 311-...
XC5202-6PQG100I
Price: 2.5-3 USD
Field-Programmable Gate Array, QFP, -0.5 to +7.0 V, 50 MHz, Internal 3-state bussing capability
C1005X7R1C221KT
Price: 0.001-0.002 USD
ceramic capacitor, general use SMD, Low residual inductance, High-accuracy
MG75J2YS40
Price: 14-16 USD
Silicon N Channel IGBT, MODULE, 600 V, High input impedance, Enhancement-mode
JCBP-290+
Price: 0.34-0.5 USD
Bandpass Filter, SMD, 0.5W
LT1184FCS
Price: 1.45-1.55 USD
dual current mode switching regulator, SOP-16, 100mA, 60V, Low Quiescent Current, High Switching F...
PCA82C250T
Price: 0.31-0.55 USD
50ns, high speed, CAN controller interface, SOIC8, Low-current Standby mode
NOJE337M006RWJ
Price: 0.036-0.04 USD
Niobium Oxide Capacitor, SMD, 0.02CV, NbO niobium oxide ceramic material
CA3161E
Price: 6.25-7 USD
monolithic integrated circuit, 25mA, DIP
