Discrete Semiconductor Modules IGBT MODULE 1200V, 100A
MII100-12A3: Discrete Semiconductor Modules IGBT MODULE 1200V, 100A
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Product : | Power Semiconductor Modules | Packaging : | Box |
Technical/Catalog Information | MII100-12A3 |
Vendor | IXYS Corporation |
Category | Transistors, FETs, IGBTs |
Mounting Type | Screw Mount |
Package Name | IGBT Module |
IGBT Type | NPT (Non-Punch Through) |
Input Type | Standard |
Collector Current (Ic) | 135.00 A [Max] |
Collector Peak Current (Icm) | 180.000 A [Nom] |
Power Dissipation | 560.000 W [Max] |
Packaging | Bulk |
Saturation Collector Volt | 2.70 V @ 75.00 A |
Delay Time On | 100.00 ns [Typ] |
Delay Time Off | 650.00 ns [Typ] |
Rise Time | 50.000 ns [Typ] |
Fall Time | 50.000 ns [Typ] |
Operating Junction Temperature | 150 °C [Max] |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MII100 12A3 MII10012A3 |