Discrete Semiconductor Modules IGBT MODULE 1200V, 100A
MII100-12A3: Discrete Semiconductor Modules IGBT MODULE 1200V, 100A
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| Product : | Power Semiconductor Modules | Packaging : | Box |
| Technical/Catalog Information | MII100-12A3 |
| Vendor | IXYS Corporation |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Screw Mount |
| Package Name | IGBT Module |
| IGBT Type | NPT (Non-Punch Through) |
| Input Type | Standard |
| Collector Current (Ic) | 135.00 A [Max] |
| Collector Peak Current (Icm) | 180.000 A [Nom] |
| Power Dissipation | 560.000 W [Max] |
| Packaging | Bulk |
| Saturation Collector Volt | 2.70 V @ 75.00 A |
| Delay Time On | 100.00 ns [Typ] |
| Delay Time Off | 650.00 ns [Typ] |
| Rise Time | 50.000 ns [Typ] |
| Fall Time | 50.000 ns [Typ] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MII100 12A3 MII10012A3 |