Purchase MIR-3301, In-stock MIR-3301 From SeekIC.
Part Number: MIR-3301
Description: The MIR-3301 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor ...
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MIR-3301
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DataSheet
General Description
MIR-3301 General Description
The MIR-3301 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.
MIR-3301 Maximum Ratings
|
Parameter |
Symbol |
Minimum Rating |
Maximum Rating |
Unit | |
| INPUT | Continuous Forward Current |
LF |
50 |
mA | |
| Reverse Voltage |
VR |
5 |
V | ||
| Power Dissipation |
Pad |
75 |
mW | ||
| OUTPUT | Collector-emitter breakdown voltage |
V(BR)CEO |
30 |
V | |
| Emitter-Collector breakdown voltage |
V(BR)ECO |
5 |
V | ||
| Collector power dissipation |
PC |
75 |
mW | ||
| Total power dissipation |
PTOT |
100 |
mW | ||
| Operating Temperature Range |
Topr |
-25oC to + 85oC | |||
| Storage Temperature Range |
TSTG |
-40oC to + 100oC | |||
| Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC | |||||
MIR-3301 Features
·Compact and thin
·MIR-3301 : Compact DIP, long lead type
·Optimum detecting diatance : 0.8 - 1.0 mm
·Wavelength : 940nm
·Visible light cut-off type
MIR-3301
PDF/DataSheet Download
- Datasheet: MIR-3301
- File Size: 56959 KB
- Manufacturer: UOT [Unity Opto Technology]
- Click here to Download
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