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Part Number: MIT-5A11J

 

 

 

 

Description: The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor...


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MIT-5A11J General Description


The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.

MIT-5A11J Maximum Ratings

Parameter
Symbol
Minimum Rating
Unit
INPUT Continuous Forward Current
LF
50
mA
Reverse Voltage
VR
5
V
Power Dissipation
Pad
75
mW
OUTPUT Collector-emitter breakdown voltage
V(BR)CEO
30
V
Emitter-Collector breakdown voltage
V(BR)ECO
5
V
Collector power dissipation
PC
75
mW
Total power dissipation
PTOT
100
mW
Operating Temperature Range
Topr
-25oC to + 85oC
Storage Temperature Range
TSTG
-40oC to + 100oC
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC

MIT-5A11J Features

·Non -contact switching
·For- direct pc board or
·Dual - in - line socket mounting
·Fast switching speed
·Choice of mounting configuration

MIT-5A11J datasheet

MIT-5A11J
PDF/DataSheet Download

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Related Part Number

MIT-5A11J Relative Products

  • MIT-5A11C

    MIT-5A11C

    The MIT-5A11C consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter.

  • MIT-5A11B

    MIT-5A11B

    The MIT-5A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.

  • MIT-5A117

    MIT-5A117

    The MIT-5A117 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a reflective subminiature photointerrupter.

  • MIT-5A116-U

    MIT-5A116-U

    The MIT-5A116-U consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.

  • MIT-5A116

    MIT-5A116

    The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.

  • MIT-4A11B

    MIT-4A11B

    The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.

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