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MJ11012

Transistors Darlington 30A 60V Bipolar

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SeekIC No. : 00218094 Detail

MJ11012: Transistors Darlington 30A 60V Bipolar

MJ11012 Data Sheet

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Part Number:
MJ11012
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 60 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 60 V Maximum DC Collector Current : 30 A
Power Dissipation : 200 W Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204
Packaging : Tray    

Description

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Maximum DC Collector Current : 30 A
Power Dissipation : 200 W


Application

• High DC Current Gain - hFE = 1000 (Min) @ IC 20 Adc
• Monolithic Construction with Builtin Base Emitter Shunt Resistor
• Junction Temperature to +200




Specifications

Rating
Symbol
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
Unit
CollectorEmitter Voltage
VCEO
60
90
120
Vdc
Collector Base Voltage
VCBO
60
90
120
Vdc
EmitterBase Voltage
VEBO
5
Vdc
Collector Current
IC
30
Adc
Base Current
IB
1
Adc
Total Device Dissipation @TC = 25
Derate above 25 @ TC = 100
PD

200
1.15
Watts
W/
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +200





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