MJ11012G, US $ 1.68-2.53 , ON Semiconductor, MJ11012G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00216878 Detail

MJ11012G: Transistors Darlington 30A 60V Bipolar Power NPN

MJ11012G Data Sheet

US $ 1.68~2.53 / Piece | Get Latest Price

Part Number:: MJ11012G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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MJ11011 evaluate
Specifications Characteristic Symbol Rating Unit Collector-Base Voltage VCBO...
MJ11012 evaluate
Transistors Darlington 30A 60V Bipolar
MJ11013 evaluate
US $4.22 - 4.84 / Piece

Transistors Darlington PNP Power

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Configuration :	Single	Transistor Polarity :	NPN
Collector- Emitter Voltage VCEO Max :	60 V	Emitter- Base Voltage VEBO :	5 V
Collector- Base Voltage VCBO :	60 V	Maximum DC Collector Current :	30 A
Power Dissipation :	200 W	Maximum Operating Temperature :	+ 200 C
Mounting Style :	Through Hole	Package / Case :	TO-204
Packaging :	Tray

Description

Maximum Collector Cut-off Current :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Maximum DC Collector Current : 30 A
Power Dissipation : 200 W

Parameters:

Technical/Catalog Information	MJ11012G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	30A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 200mA, 20A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJ11012G MJ11012G MJ11012GOS ND MJ11012GOSND MJ11012GOS

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MJ11012G

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