MJ15025

Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 15
Collector- Emitter Voltage VCEO Max : 250 V
Maximum DC Collector Current : 16 A
Maximum Operating Frequency : 4 MHz (Min)


Application

·Designed for high power audio, disk head positioners and other linear applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	MJ15023	Open emitter	-350	V
		MJ15025		-400
VCEO	Collector-emitter voltage	MJ15023	Open base	-200	V
		MJ15025		-250
VEBO	Emitter-base voltage		Open collector	-5	V
IC	Collector current			-16	A
ICM	Collector current-peak			-30	A
IB	Base current			-5	A
PD	Total power dissipation		TC=25	250	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~200

Description

The MJ15025 features are as follows:
·With TO-3 package
·Complement to type MJ15022; MJ15024
·Excellent safe operating area
·High DC current gain
h_FE = 15 (Min) @ I_C = 8 Adc




Parameters:

Technical/Catalog Information	MJ15025
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	16A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 8A, 4V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 800mA, 8A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	500A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ15025 MJ15025 MJ15025OS ND MJ15025OSND MJ15025OS