Transistors Bipolar (BJT) 5A 25V 12.5W NPN
MJD200T4: Transistors Bipolar (BJT) 5A 25V 12.5W NPN
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 25 V |
| Emitter- Base Voltage VEBO : | 8 V | Maximum DC Collector Current : | 5 A |
| DC Collector/Base Gain hfe Min : | 70 at 500 mA at 1 V | Configuration : | Single |
| Maximum Operating Frequency : | 65 MHz (Min) | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | DPAK |
| Packaging : | Reel |
| Technical/Catalog Information | MJD200T4 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 5A |
| Power - Max | 12.5W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Frequency - Transition | 65MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Digi-Reel? |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJD200T4 MJD200T4 MJD200T4OSDKR ND MJD200T4OSDKRND MJD200T4OSDKR |