MJD2955

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Package / Case : DPAK
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum Operating Frequency : 2 MHz (Min)
Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 at 4 A at 4 V


Application

• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, " -I " Suffix)
• Electrically Similar to Popular MJE2955T
• DC Current Gain Specified to 10A
• High Current Gain - Bandwidth Product: T = 2MHz (MIN), IC = -500mA


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-70	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-10	A
IB	Base Current	-6	A
PC	Total Dissipation at Tc = 25	20	W
	Total Dissipation at Ta = 25	1.75	W
TJ	Junction Temperature	150
Tstg	Storage Temperature	-55 to 150

Parameters:

Technical/Catalog Information	MJD2955
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 400mA, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJD2955 MJD2955