Purchase MJD29/29C, In-stock MJD29/29C From SeekIC.
- Table of contents:
MJD29/29C
-
Suppliers
DataSheet
General Description
MJD29/29C Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage : MJD29 : MJD29C |
40 100 |
V V |
|
VCEO |
Collector-Emitter Voltage : MJD29 : MJD29C |
40 100 |
V V |
|
VEBO |
Emitter-Base Voltage |
5 |
V |
|
IC |
Collector Current(DC) |
1 |
A |
|
ICP |
Collector Current (Pulse) |
3 |
A |
|
IB |
Base Current |
0.4 |
A |
|
PC |
Collector Dissipation (TC=25) |
15 |
W |
| Collector Dissipation (Ta=25) |
1.56 |
W | |
|
Tstg |
Storage Temperature |
150 |
|
|
TJ |
Max. Operating Junction Temperature |
-65 to 150 |
MJD29/29C Typical Application
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, "- I" Suffix)
• Electrically Similar to Popular TIP29 and TIP29C
• Straight Lead (I-PAK, "- I" Suffix)
• Electrically Similar to Popular TIP29 and TIP29C
MJD112
PDF/DataSheet Download
- Datasheet: MJD112
- File Size: 52676 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
- ·MJD112/L
- KEC
- EPITAXIAL PLANAR NPN TRANSISTOR
- 32768 KB
- ·MJD112-001
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD1121
- MOTOROLA [Motorola, Inc]
- SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
- 313845 KB
- ·MJD112L
- KEC [KEC(Korea Electronics)]
- EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
- 404075 KB
- ·MJD112RL
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD112T4
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 313845 KB
- ·MJD112T4G
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD117
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 404229 KB
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