MJD42C1

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Package / Case : IPAK
Maximum DC Collector Current : 6 A
Maximum Operating Frequency : 3 MHz (Min)
DC Collector/Base Gain hfe Min : 30 at 0.3 A at 4 V


Parameters:

Technical/Catalog Information	MJD42C1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	6A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 600mA, 6A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Through Hole
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJD42C1 MJD42C1