MJE18006

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 6 A
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 450 V
Maximum Operating Frequency : 14 MHz
DC Collector/Base Gain hfe Min : 5


Features:

·With TO-220C package
·High voltage ,high speed


Application

·Designed for use in 220V line-operatedswitchmode power supplies and electronic light ballasts.




Specifications

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	Open emitter	1000	V
VCEO	Collector-emitter voltage	Open base	450	V
VEBO	Emitter-base voltage	Open collector	9	V
IC	Collector current(DC)		6	A
ICM	Collector current-Peak		15	A
IB	Base current		4	A
IBM	Base current-Peak		8	A
PC	Collector power dissipation	TC=25	100	W
Tj	Junction temperature		150
Tstg	Storage temperature		-65~150

Parameters:

Technical/Catalog Information	MJE18006
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	450V
Current - Collector (Ic) (Max)	6A
Power - Max	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	600mV @ 130mA, 1.3A
Frequency - Transition	14MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJE18006 MJE18006